リ　ネイ   LI NING   李　寧    所属   工学部 電気電子工学科    職種   助教
言語種別	英語
発行・発表の年月	2015/04
形態種別	学術論文
査読	査読あり
標題	High-Q Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits
執筆形態	共著
掲載誌名	IEEE Transactions on Electron Devices
掲載区分	国内
概要	A helium-3 ion bombardment technique is proposed to realize high-Q inductors by creating locally semi-insulating substrate areas. A dose of 1.0 × 1013 cm−2 helium-3 increases a Si substrate resistivity from 4 ·cm to above 1 k·cm, which improves the quality factor of a 2-nHinductor with a 140-μm diameter by 38% (Q = 16.3). An aluminum mask is used for covering active areas, and at least 15-μm distance from the maskedge is required to avoid the p-n　junction leakage. The proposed technique is applied to an 8-GHz oscillator, and an 8.5 dB improvementof the measured phase noise has been achieved. 主筆