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リ ネイ
LI NING
李 寧 所属 工学部 電気電子工学科 職種 助教 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2009/12 |
| 形態種別 | 国際会議論文 |
| 査読 | 査読あり |
| 標題 | CMOS Device Modeling for Millimeter-Wave Power Amplifiers |
| 執筆形態 | 共著 |
| 掲載誌名 | IEEE Radio Frequency Integrated Circuits Symposium |
| 掲載区分 | 国内 |
| 概要 | Practical characterization of active and passive devices in CMOS technology is presented in this paperfor designing millimeter-wave power amplifiers. Detailed modeling strategy for transmission line, T-junction, and transistor is explained with some actually-designedmillimeter-wave amplifiers. A 4-stagePA is implemented in 65 nm CMOS process. A 20 dB power gain and a 9.9dBm 1-dB output compression point areachieved at 60 GHz.
副筆 |