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言語種別	英語
発行・発表の年月	2010/09
形態種別	国際会議論文
査読	査読あり
標題	A 24-dB Gain 51-68-GHz CMOS Low Noise Amplifier Using Asymmetric-Layout Transistors
執筆形態	共著
掲載誌名	IEEE European Solid-State Circuits Conference
掲載区分	国内
概要	At mm-wave frequency, the layout of CMOS transistors has a larger effect on the device performance than ever before in low frequency. In this work, the distance between the gate and drain contact (Dgd) has been enlarged to obtain a better maximum available gain (MAG). A 0.6 dB MAG improvement is realized when Dgd changes from 60 nm to 200 nm. By using the asymmetric-layout transistor, a four-stage common-source low noise amplifier is implemented in a 65 nm CMOS process. A measured peak power gain of 24 dB is achieved with a power dissipation of 30 mW from a 1.2-V power supply. An 18 dB variable gain is also realized by adjusting the bias voltage. The measured 3-dB bandwidth is about 17 GHz from 51 GHz to 68GHz, and noise figure (NF) is from 4.0 dB to 7.6 dB 主筆