リ ネイ
LI NING
李 寧 所属 工学部 電気電子工学科 職種 助教 |
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言語種別 | 英語 |
発行・発表の年月 | 2011/12 |
形態種別 | 国際会議論文 |
査読 | 査読あり |
標題 | A Wideband LNA with an Excellent Gain Flatness for 60-GHz 16QAM Modulation in 65-nmCMOS |
執筆形態 | 共著 |
掲載誌名 | IEEE Asia- Pacific Microwave Conference |
掲載区分 | 国内 |
概要 | In 60 GHz radios, at least 9 GHz flatgain is needed for the whole band for16-QAM modulation. A 23 GHz 3 dB bandwidth, 6.3 dB to 17.5 dB variable gain, less than 4.3 dB NF, -7.7 dBm IIP3, four-stage common source LNA isproposed in this paper. The LNA uses guided micro-strip transmission line to realize simple input and inter-stage impedance matching networks.
The prototype LNA is implemented in 65 nm CMOS with a chip area of 0.354 mm2 including RF pad. 副筆 |