リ　ネイ   LI NING   李　寧    所属   工学部 電気電子工学科    職種   助教
言語種別	英語
発行・発表の年月	2014/06
形態種別	国際会議論文
査読	査読あり
標題	High-Q Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits
執筆形態	共著
掲載誌名	IEEE Symposium on VLSI Technology
掲載区分	国内
概要	A novel helium-3 ion bombardment technique is proposed for creating locally semi-insulating substrate areas.　A helium-3 dose of only 1.5×1013 cm-2 increases a Si substrate resistivity from 6Ω-cm to 1.5kΩ-cm, which improves the quality factor of a 2-nH inductor with a 140μm-diameterby 38% (Q=16.3). An aluminum mask is used for covering active areas, and at most 15-μm distance from the mask edge is required to avoid the p-n junction leakage. The proposed technique is applied to an 8-GHz oscillator, and an 8.5-dB improvementin the measured phase noise has been achieved. 主筆