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言語種別	英語
発行・発表の年月	2015/09
形態種別	国際会議論文
査読	査読あり
標題	Substrate NoiseIsolation Improvement by Helium-3 Ion Irradiation Technique in a Triple-well CMOS Process
執筆形態	共著
掲載誌名	IEEE European Solid-State Device Conference
掲載区分	国外
出版社・発行元	IEEE
著者・共著者	Ning Li, Takeshi Inoue, Takuichi Hirano, Jian Pang, Rui Wu, Kenichi Okada, Hitoshi Sakane, and Akira Matsuzawa
概要	Helium-3 ion irradiation technique isproposed to improve silicon substratenoise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process.A 90% noise reduction has been achieved in the measurement results for test structures with guard rings.The noise isolation can be kept even after annealing at 200°C for 1 hour. 主筆