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言語種別	英語
発行・発表の年月	2018/08
形態種別	国際会議論文
標題	Loss Reduction of Silicon Substrate by Helium-3 or Proton Ion Irradiation for a Millimeter-Wave CMOS Chip
執筆形態	共著
掲載誌名	Proc. of European Advanced Material Congress
掲載区分	国内
概要	60 GHz CMOS on-chip antenna is low radiation efficiency due to large loss of silicon (Si) substrate. It isreported that loss due to lossy silicon substrate can be reduced by helium-3 ion irradiation. There are active devices and well (P-well or N-well) on the surface of the silicon substrate. To reduce loss due to well, we have introduced　through-silicon via (TSV) and characteristics are analyze. 副筆