リ ネイ   LI NING
  李 寧
   所属   工学部 電気電子工学科
   職種   助教
言語種別 英語
発行・発表の年月 2010/02
形態種別 学術論文
査読 査読あり
標題 Evaluation of a Multi-Line De-embedding Technique up to 110GHz for Millimeter-Wave CMOS Circuit Design
執筆形態 共著
掲載誌名 IEICE Transactions on Fundamentals of Electronics, Communications and Computer Science
掲載区分国内
概要 An L-2L through-line de-embedding method has been verified up to millimeter wave frequency. The parasitics of the pad can be modeled from the L-2L through-line.
Measurement results of the transmission lines and transistors can be de-mbedded by subtracting theparasitic matrix of the pad.
Therefore, the de-embedding patterns,which is used for modeling active andpassive devices, decrease greatly andthe chip area also decreases. A one-
stage amplifier is firstly implemented for helping verifying thede-embedding results. After that a four-stage 60GHz amplifier has been fabricated in CMOS 65nm process.
Experimental results show that the four-stage amplifier realizes an input matching better than -10.5dB and an output matching better than -13dB at 61GHz. A small signal power gain of 16.4dB and a 1dB output compression point of 4.6dBm are obtained with a DC current consumption of 128mA from a 1.2V power supply. The chip size is 1.5mm × 0.85mm.
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