リ ネイ
LI NING
李 寧 所属 工学部 電気電子工学科 職種 助教 |
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言語種別 | 英語 |
発行・発表の年月 | 2010/02 |
形態種別 | 学術論文 |
査読 | 査読あり |
標題 | Evaluation of a Multi-Line De-embedding Technique up to 110GHz for Millimeter-Wave CMOS Circuit Design |
執筆形態 | 共著 |
掲載誌名 | IEICE Transactions on Fundamentals of Electronics, Communications and Computer Science |
掲載区分 | 国内 |
概要 | An L-2L through-line de-embedding method has been verified up to millimeter wave frequency. The parasitics of the pad can be modeled from the L-2L through-line.
Measurement results of the transmission lines and transistors can be de-mbedded by subtracting theparasitic matrix of the pad. Therefore, the de-embedding patterns,which is used for modeling active andpassive devices, decrease greatly andthe chip area also decreases. A one- stage amplifier is firstly implemented for helping verifying thede-embedding results. After that a four-stage 60GHz amplifier has been fabricated in CMOS 65nm process. Experimental results show that the four-stage amplifier realizes an input matching better than -10.5dB and an output matching better than -13dB at 61GHz. A small signal power gain of 16.4dB and a 1dB output compression point of 4.6dBm are obtained with a DC current consumption of 128mA from a 1.2V power supply. The chip size is 1.5mm × 0.85mm. 主筆 |